Raman scattering study of the thermal oxidation of InP
- 15 November 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (10) , 925-927
- https://doi.org/10.1063/1.91861
Abstract
Reflection Raman scattering has been used to study thermally grown air‐oxidized films on InP. Elemental red phosphorus is detected in films grown between 350 and 550 °C. At oxidation temperatures exceeding 550 °C, InPO4 is observed with some In2O3 also present as a minor film constituent.Keywords
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