Thermal oxidation of InP
- 1 January 1980
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (1) , 812-814
- https://doi.org/10.1063/1.327302
Abstract
The growth rate and chemical composition of thermally grown oxides on InP in dry oxygen are presented. The oxide is found to grow very slowly below 340 °C and rapidly above this temperature. All the oxides grown in the temperature range 340–450 °C are composed of approximately 70%–75% In2O3 and 25%–30% P2O5. There is also some evidence for low concentrations of another bonding state of phosphorous.This publication has 11 references indexed in Scilit:
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