A revised model for the oxidation of Si by oxygen
- 1 September 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (5) , 424-426
- https://doi.org/10.1063/1.90409
Abstract
A conceptually simple modification of the Deal‐Grove model for oxidation of Si by dry oxygen provides an excellent fit to experimental data while removing the regime of ’’anomalously high’’ initial oxidation rates inferred by previous workers. The essential physical proposal is that while diffusion through the amorphous oxide is via molecular oxygen, Si oxidation occurs through the reaction of a small concentration of atomic oxygen.This publication has 11 references indexed in Scilit:
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