Far-infrared capture of electrons by DX centers
- 20 April 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (16) , 1972-1974
- https://doi.org/10.1063/1.107115
Abstract
Intense radiation with photon energy of a few meV can induce the capture of electrons by DX centers in AlxGa1−xAs:Si.Keywords
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