Investigation of persistent photoconductivity in Si-dopedn-Al x Ga1?x as grown by molecular beam epitaxy
- 1 October 1983
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 32 (2) , 69-78
- https://doi.org/10.1007/bf00617831
Abstract
No abstract availableKeywords
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