Surface energy and relaxation effects at (111) semiconductor surfaces
- 1 October 1975
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 17 (7) , 843-845
- https://doi.org/10.1016/0038-1098(75)90734-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Chemical pseudopotential approach to covalent bonding. II. Bond lengths and bond energies in diamond, silicon and graphiteJournal of Physics C: Solid State Physics, 1975
- A chemical pseudopotential approach to covalent bonding. IJournal of Physics C: Solid State Physics, 1975
- Back, dangling and multiple bonds on covalent surfacesSurface Science, 1974
- Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)Physical Review Letters, 1974
- Two-dimensional excitonic insulators: Si and Ge (111) surfacesSolid State Communications, 1974
- Surface States and Surface Bonds of Si(111)Physical Review Letters, 1973
- Non-Hermitian representations in localized orbital theoriesThe Journal of Chemical Physics, 1973
- Structure and transformation characteristics of impurity stabilized phases on the Si(111) surfaceSurface Science, 1971
- Localized Orbitals for Molecular Quantum Theory. I. The Hückel TheoryPhysical Review B, 1969
- Direct Measurements of the Surface Energies of CrystalsJournal of Applied Physics, 1960