Low current base-collector boundary conditions in GHz frequency transistors
- 31 October 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (10) , 845-847
- https://doi.org/10.1016/0038-1101(75)90005-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Simplified computer-aided analysis of double-diffused transistors including two-dimensional high-level effectsIEEE Transactions on Electron Devices, 1972
- Current gain and cutoff frequency falloff at high currentsIEEE Transactions on Electron Devices, 1969
- Effects of modified collector boundary conditions on the basic properties of a transistorSolid-State Electronics, 1963
- Conditions at a p-n junction in the presence of collected currentSolid-State Electronics, 1963