Semiconductor Structures for 100 GHz Silicon IMPATT Diodes
- 1 October 1987
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A 90-GHz double-drift IMPATT diode made with Si MBEIEEE Transactions on Electron Devices, 1987
- Power Increase of Pulsed Millimeter-Wave IMPATT Diodes (Short Paper)IEEE Transactions on Microwave Theory and Techniques, 1985
- Applications of scaling to problems in high-field electronic transportJournal of Applied Physics, 1981
- Large-signal performance of microwave transit-time devices in mixed tunneling and avalanche breakdownIEEE Transactions on Electron Devices, 1979
- Electron and hole ionization rates in epitaxial silicon at high electric fieldsSolid-State Electronics, 1973