Growth initiation and cathodoluminescence irregularities in LPE AlGaAs layers
- 1 June 1979
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (6) , 4128-4130
- https://doi.org/10.1063/1.326492
Abstract
In a previous publication, we described the occurrence of a patchy contrast in cathodoluminescence (CL) images of thin LPE layers of AlGaAs grown on Cr-doped GaAs substrates. The present paper, a continuation of that work, reports on CL observations of LPE AlGaAs layers grown on Si-doped GaAs substrates and on freshly grown Sn-doped LPE layers; in addition, we have examined changes in the CL intensity distribution with layer thickness. It is concluded that the ’’patches’’ are confined to a region near the GaAs-AlGaAs interface, and that their appearance is associated with the initiation of the AlGaAs epilayer growth.This publication has 2 references indexed in Scilit:
- Cathodoluminescence of AlxGa1−xAs grown by liquid-phase epitaxyJournal of Applied Physics, 1978
- A determination of the undercooling necessary to initiate the epitaxial growth of GaAs from solution in GaJournal of Crystal Growth, 1972