Striations als ursache von knickstellen in pn-//übergängen von leistungsbauelementen
- 31 October 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (10) , 1087-1090
- https://doi.org/10.1016/0038-1101(74)90149-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Infrared observation of the breakdown behavior of high-voltage p-n junctions and p-n-p structures in siliconIEEE Transactions on Electron Devices, 1973
- A Simplification of Kämper's Striation Etch for SiliconJournal of the Electrochemical Society, 1973
- Zum einfluss von temperprozessen auf widerstandsschwankungen in siliziumeinkristallenSolid-State Electronics, 1972
- A New Method for Revealing Striations in High-Resistive Floating-Zone Silicon CrystalsJournal of the Electrochemical Society, 1972
- A New Striation Etch for SiliconJournal of the Electrochemical Society, 1970
- Resistivity Inhomogeneities in Silicon CrystalsJournal of the Electrochemical Society, 1967