Zum einfluss von temperprozessen auf widerstandsschwankungen in siliziumeinkristallen
- 31 December 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (12) , 1383-1384
- https://doi.org/10.1016/0038-1101(72)90133-5
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Methoden zur untersuchung inhomogener dotierstoff-verteilung in silicium-einkristallenSolid-State Electronics, 1969
- Resistivity Inhomogeneities in Silicon CrystalsJournal of the Electrochemical Society, 1967
- Notizen: Widerstandsfeinstreifungen in tiegelgezogenen Si-KristallenZeitschrift für Naturforschung A, 1965
- Avalanche Effects in Silicon p—n Junctions. II. Structurally Perfect JunctionsJournal of Applied Physics, 1963
- LIQUID–SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHODCanadian Journal of Physics, 1960