0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD
- 20 February 1996
- journal article
- research article
- Published by Wiley in Microwave and Optical Technology Letters
- Vol. 11 (3) , 135-139
- https://doi.org/10.1002/(sici)1098-2760(19960220)11:3<135::aid-mop7>3.0.co;2-m
Abstract
No abstract availableKeywords
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- A recessed-gate InAlAs/n/sup +/-InP HFET with an InP etch-stop layerIEEE Electron Device Letters, 1992
- Pseudomorphic n-InGaP/InGaAs/GaAs grown by MOVPE for HEMT LSIsJournal of Crystal Growth, 1991