Crystal forms by solid-state recrystallization of amorphous Si films on SiO2
- 5 August 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (6) , 653-655
- https://doi.org/10.1063/1.105382
Abstract
The recrystallization behavior of amorphous silicon films formed by Si+ ion bombardment onto polycrystalline silicon films has been studied. Two crystal forms have been identified by transmission electron microscopy and electron diffraction for the first time. Disk‐shaped crystals are formed as a result of the presence of {111} twin planes parallel to the film surface. Threefold symmetric crystals are formed by the presence of the three {111} twin planes that are not parallel to the film surface. Their feature looks less dendritic due to restricted space of film thickness in which crystal branches may grow. These two crystal forms have 〈111〉 direction normal to the film surface. A model for the formation of these crystals is proprosed in the process of solid‐state recrystallization.Keywords
This publication has 5 references indexed in Scilit:
- Control of Resistivity of Polycrystalline Si Films by Solid-Phase Recrystallization (SPR)Japanese Journal of Applied Physics, 1988
- Manipulation of nucleation sites and periods over amorphous substratesApplied Physics Letters, 1988
- Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parametersJournal of Applied Physics, 1987
- Some observations on the amorphous to crystalline transformation in siliconJournal of Applied Physics, 1982
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978