Energy bands in quantum confined silicon light-emitting diodes
- 5 July 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (1) , 45-47
- https://doi.org/10.1063/1.109745
Abstract
Measurements of the temperature dependence of the current-voltage characteristics of heterojunction light-emitting diodes fabricated by depositing indium tin oxide onto the surface of electrochemically etched p-type silicon (porous silicon) are presented, and the results are compared with those for adjacent devices formed on nonprocessed bulk silicon. The barrier height for the diodes which exhibit quantum confinement effects was determined to be 0.42 eV. Unlike the bulk silicon devices, the diodes prepared on porous silicon did not manifest a photovoltaic effect. These observations allow us to present a potential energy diagram for porous silicon heterojunction diodes which indicates barriers in both the conduction band and the valence band.Keywords
This publication has 16 references indexed in Scilit:
- Current injection mechanism for porous-silicon transparent surface light-emitting diodesApplied Physics Letters, 1992
- Visible electroluminescence from porous silicon np heterojunction diodesApplied Physics Letters, 1992
- Luminescence and structural study of porous silicon filmsJournal of Applied Physics, 1992
- Porosity and Pore Size Distributions of Porous Silicon LayersJournal of the Electrochemical Society, 1987
- Interfacial stability of SnO2/n-Si and In2O3:Sn/n-Si heterojunction solar cellsJournal of Applied Physics, 1983
- Theoretical efficiency of SnO2/Si solar cellsJournal of Applied Physics, 1979
- The operation of the semiconductor-insulator-semiconductor solar cell: ExperimentJournal of Applied Physics, 1979
- Efficient photovoltaic heterojunctions of indium tin oxides on siliconApplied Physics Letters, 1976
- The role of the interfacial layer in metal−semiconductor solar cellsJournal of Applied Physics, 1975
- Potential barriers to electron tunnelling in ultra-thin films of SiO2Solid State Communications, 1974