Efficient photovoltaic heterojunctions of indium tin oxides on silicon
- 15 October 1976
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (8) , 494-496
- https://doi.org/10.1063/1.89135
Abstract
Heterojunction diodes of indium tin oxide films sputtered onto p-silicon using ion beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurments confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, we observed an open-circuit voltage of 0.51 V, short-circuit current of 32 mA/cm2, fill factor of 0.70, and conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/cm2, and the fill factor fell to 0.60.Keywords
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