Defect characterization in high temperature implanted 6HSiC using TEM
- 19 May 1997
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 127-128, 347-349
- https://doi.org/10.1016/s0168-583x(96)00954-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in 6H α-SiC single crystals irradiated by swift Xe ionsPhilosophical Magazine A, 1994
- Damage and aluminum distributions in sic during ion implantation and annealingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- High-resolution electron microscopy of neutron-irradiation-induced dislocations in SiCPhilosophical Magazine A, 1990