Damage and aluminum distributions in sic during ion implantation and annealing
- 1 March 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 65 (1-4) , 341-344
- https://doi.org/10.1016/0168-583x(92)95063-w
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- A channeling study of ion-produced disorder in silicon carbideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- SiC amorphlzation as a result of Ga+ implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988