A channeling study of ion-produced disorder in silicon carbide

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2 March 1990

journal article
Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Vol. 48 (1-4) , 235-239
https://doi.org/10.1016/0168-583x(90)90111-7

Abstract

No abstract available

Keywords

This publication has 9 references indexed in Scilit:

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