Reconstruction of electrostatic force microscopy images
- 28 July 2005
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 76 (8) , 083705
- https://doi.org/10.1063/1.1988089
Abstract
An efficient algorithm to restore the actual surface potentialimage from Kelvin probe force microscopy measurements of semiconductors is presented. The three-dimensional potential of the tip-sample system is calculated using an integral equation-based boundary element method combined with modeling the semiconductor by an equivalent dipole-layer and image-chargemodel. The derived point spread function of the measuring tip is then used to restore the actual surface potential from the measured image, using noise filtration and deconvolution algorithms. The model is then used to restore high-resolution Kelvin probe microscopy images of semiconductor surfaces.Keywords
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