Measuring and modifying the electric surface potential distribution on a nanometre scale: a powerful tool in science and technology
- 20 May 1999
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 27 (5-6) , 361-367
- https://doi.org/10.1002/(sici)1096-9918(199905/06)27:5/6<361::aid-sia482>3.0.co;2-8
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs DevicesJapanese Journal of Applied Physics, 1997
- Nanometer-scale imaging of potential profiles in optically excited n-i-p-i heterostructure using Kelvin probe force microscopyApplied Physics Letters, 1995
- Silicon pn junction imaging and characterizations using sensitivity enhanced Kelvin probe force microscopyApplied Physics Letters, 1995
- Improvement of Kelvin Probe Force Microscope (KFM) SystemJapanese Journal of Applied Physics, 1995
- Structural study of Langmuir–Blodgett films by scanning surface potential microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Kelvin probe force microscopyApplied Physics Letters, 1991
- High resolution atomic force microscopy potentiometryJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- High-resolution capacitance measurement and potentiometry by force microscopyApplied Physics Letters, 1988
- Scanning tunneling microscopy and potentiometry on a semiconductor heterojunctionApplied Physics Letters, 1987
- Scanning tunneling potentiometryApplied Physics Letters, 1986