Demonstration of (/spl lambda//spl ap/11.5-μm) GaAs-based quantum cascade laser operating on a Peltier cooled element
- 1 June 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 13 (6) , 556-558
- https://doi.org/10.1109/68.924018
Abstract
We demonstrate an average power of 2 mW at /spl lambda//spl ap/11.5 μm and 233 K, for a GaAs-based quantum cascade laser mounted on a Peltier cooler. Furthermore, a maximum operating temperature of 285 K has also been demonstrated. These results are attributed to the excellent intrinsic thermal characteristics of these lasers and good heat management, achieved through the structural design and epi-side down mounting. Measurements show a thermal resistance of 6.7 K/W at 233 K, in good-agreement with our models.Keywords
This publication has 8 references indexed in Scilit:
- AlAs/GaAs quantum cascade lasers based on large direct conduction band discontinuityApplied Physics Letters, 2000
- Improved temperature performance of Al0.33Ga0.67As/GaAs quantum-cascade lasers with emission wavelength at λ≈11 μmApplied Physics Letters, 2000
- Low-loss Al-free waveguides for unipolar semiconductor lasersApplied Physics Letters, 1999
- Improved CW operation of quantum cascade lasers with epitaxial-side heat-sinkingIEEE Photonics Technology Letters, 1999
- High peak power (1.1 W) (Al)GaAs quantum cascadelaser emitting at 9.7 µmElectronics Letters, 1999
- GaAs/Al x Ga 1−x As quantum cascade lasersApplied Physics Letters, 1998
- High-power continuous-wave quantum cascade lasersIEEE Journal of Quantum Electronics, 1998
- Thermal resistance of heterostructure lasersJournal of Applied Physics, 1975