Interaction of deuterium gas with dry SiO2 on Si: An ion-beam study
- 15 June 1987
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (12) , 5428-5437
- https://doi.org/10.1063/1.338284
Abstract
The interaction of deuterium gas (D2) with nominally dry SiO2 on Si was characterized in the temperature range 100–1000 °C using high‐sensitivity nuclear‐reaction analysis for D. Two trapped configurations were distinguished: one, hypothesized to involve Si–D bonding, produced D uptake at 300 °C and above followed by release at 600 °C; the other, identified as O–H, formed readily at 100 °C and dissociated at about 800 °C. Retained D in the 0.5‐μm oxide layer was present at areal densities of about 1014 atoms/cm2 or less, and it was distributed approximately uniformly except for a small surface peak. Prior irradiation with high‐energy He ions increased the D uptake by two orders of magnitude through, it is believed, the same trapping mechanisms discussed above. The data on uptake and release were semiquantitatively described by a fitted mathematical model, from which effective activation energies for trapping and detrapping were obtained.This publication has 31 references indexed in Scilit:
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