Device Quality SiO2 Deposited by Distributed Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition without Substrate Heating
- 1 October 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (10A) , L1404
- https://doi.org/10.1143/jjap.31.l1404
Abstract
The deposition of high electrical quality SiO2 films on Si wafers has been achieved without substrate heating, (T<∼100°C), using distributed electron cyclotron resonance (DECR) microwave plasmas. We have studied the effects of the reactant gas mixture composition (O2/SiH4) on the dielectric behavior of DECR SiO2. The electrical performances of both Si-SiO2 interfaces and SiO2 films in metal-oxide-semiconductor (MOS) structures were assessed by several characterization methods including critical field (E c) evaluation, fixed charge densities (Q ox) and interface traps densities (D it) determinations. We report typical values of E c around 6 MV·cm-1, and Q ox and D it densities around 2×1010 cm-2 and 3×1010 cm-2·eV-1 respectively. Thin film SOI-MOSFETs have also been fabricated to prove the DECR oxide quality.Keywords
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