Elimination of orientation domains and antiphase domains in the epitaxial films with chalcopyrite structure
- 1 February 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (3) , 1391-1396
- https://doi.org/10.1063/1.361038
Abstract
Thin films of CuInSe2 and CuGaSe2 were grown by molecular‐beam epitaxy. Domain structures in these films were examined by transmission electron microscopy. We demonstrate that orientation domains may not form by the use of (001)GaAs substrate while antiphase domains can be eliminated by annealing the films in the presence of a Se beam. The annealing temperatures were 400 °C for CuInSe2 and 450 °C for CuGaSe2. Photoluminescence measurements on an annealed CuInSe2 film exhibited a decrease in intensity of optical emissions associated with antisite defects and an enhancement in near‐band‐edge emission intensity.This publication has 3 references indexed in Scilit:
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