Ni/Si-Based Ohmic Contacts to p- and n-Type GaN
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1997
- Microstructural analysis of the Ge/Pd(Zn) ohmic contact to p-InPJournal of Electronic Materials, 1996
- Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)–SiC(0001) substrates via organometallic vapor phase epitaxyJournal of Materials Research, 1996
- Ohmic Contact to n-GaN with TiN Diffusion BarrierMRS Proceedings, 1996
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well DeviceJapanese Journal of Applied Physics, 1995
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well DeviceJapanese Journal of Applied Physics, 1995
- Growth of thin Ni films on GaN(0001)-(1×1)Physical Review B, 1993
- Solid-phase regrowth of compound semiconductors by reaction-driven decomposition of intermediate phasesJournal of Materials Research, 1988
- An investigation of a nonspiking Ohmic contact to n-GaAs using the Si/Pd systemJournal of Materials Research, 1988
- Halbleitertheorie der SperrschichtThe Science of Nature, 1938