Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
- 1 November 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (11B) , L1517
- https://doi.org/10.7567/jjap.34.l1517
Abstract
Quantum well structures composed of GaInN well and GaN barrier were fabricated. Room-temperature stimulated emission by pulsed current injection is observed from group III nitride using the very thin active layer, for the first time.Keywords
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