A New Growth Method Using Source Current Control to Supply Solute Elements-Demonstration of In1-xGaxAs Case
- 1 January 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (1A) , L26
- https://doi.org/10.1143/jjap.23.l26
Abstract
A controllable method to supply solute elements into growth solutions during the growth was developed for the first time. DC electric current was passed through binary semiconductor compounds used as source materials of solute elements. The source compounds can be dissolved even into saturated solutions due to Peltier heating. In such a cource current-controlled (SCC) method, the composition of growing crystals can be controlled by an electric current passed through the source compounds. The SCC method is demonstrated for the liquid phase epitaxial growth of In1-x Ga x As using InAs and GaAs as source compounds.Keywords
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