Peltier-induced liquid phase epitaxy and compositional control of mm-thick layers of (Al,Ga)As
- 1 June 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (6) , 4325-4327
- https://doi.org/10.1063/1.329247
Abstract
Epilayers of (Alx,Ga1−x)As(0.03<xXSALAS to high XSALAS in moving from the bottom to the top of the layer. The growth was performed at constant furnace temperature (T = 800 °C), with a small solution volume (15 g) and with an electric current of 10 A/cm2 as the sole driving force for the growth. The compatibility of this technique with the growth of complex multilayer structures was demonstrated.This publication has 6 references indexed in Scilit:
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