Growth of thick GaxAl1-xAs layers by liquid-phase epitaxy
- 1 February 1972
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 1 (1) , 110-126
- https://doi.org/10.1007/bf02660357
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasersMetallurgical Transactions, 1971
- EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1-xAlxAs p-n JUNCTIONS GROWN BY LIQUID-PHASE EPITAXYApplied Physics Letters, 1967