Rapid thermal anneal of sprayed Y1Ba2Cu3O7−x slurry
- 2 May 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (18) , 1531-1533
- https://doi.org/10.1063/1.99699
Abstract
Thick (∼ 20 μm) superconducting films of Y1 Ba2 Cu3 O7−x have been produced on 3 in. wafers of silicon, SiO2 ‐coated silicon, and sapphire. The process involves spraying of a slurry of finely ground powder of Y1 Ba2 Cu3 O7−x and methyl alcohol, followed by rapid thermal anneal for sintering. The Tc for Si, SiO2 , and sapphire are 70, 81, and 62 K, respectively. Post‐sinter anneal in oxygen at 400 °C further increases Tc . The adhesion of the films sintered above 980 °C is excellent.Keywords
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