Characterization of Grown-in Dislocations in Benzophenone Single Crystals by X-Ray Topography
- 1 July 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (7R)
- https://doi.org/10.1143/jjap.31.2202
Abstract
Benzophenone single crystals were grown by the Czochralski method. The dislocations introduced during the crystal growth were examined using X-ray topography. Double images of single dislocations were found on the topographs taken in some reflection planes. The Burgers vector of predominant grown-in dislocations was estimated from analysis of the dislocation images on the basis of kinematical theory.Keywords
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