Visible light emission from a pn junction of porous silicon and microcrystalline silicon carbide
- 30 August 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (9) , 1209-1210
- https://doi.org/10.1063/1.109773
Abstract
We have fabricated a new type of light‐emitting diode based on a porous silicon and microcrystalline silicon carbide pn junction. The visible light emission from 580 to 820 nm with a peak of 700 nm was observed at forward bias voltages larger than 18 V, and the emission was quite uniform over an area of 1 cm2.Keywords
This publication has 14 references indexed in Scilit:
- Efficient visible electroluminescence from highly porous silicon under cathodic biasApplied Physics Letters, 1992
- Visible light emission from a porous silicon/solution diodeApplied Physics Letters, 1992
- Visible electroluminescence from porous silicon np heterojunction diodesApplied Physics Letters, 1992
- Visible Photoluminescence of Porous Si and Its Related Optical PropertiesJapanese Journal of Applied Physics, 1991
- Thermal treatment studies of the photoluminescence intensity of porous siliconApplied Physics Letters, 1991
- Electroluminescence in the visible range during anodic oxidation of porous silicon filmsApplied Physics Letters, 1991
- Highly conductive and wide optical band gap n-type μc-SiC prepared by electron cyclotron resonance plasma-enhanced chemical vapor depositionApplied Physics Letters, 1991
- An amorphous SiC thin film visible light-emitting diode with a μc-SiC:H electron injectorJournal of Non-Crystalline Solids, 1991
- Characterization of plasma-deposited microcrystalline siliconPhilosophical Magazine Part B, 1982
- A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si:H FilmsJapanese Journal of Applied Physics, 1981