Emerging oxide degradation mechanisms: Stress induced leakage current (SILC) and quasi-breakdown (QB)
- 1 November 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 49 (1-2) , 41-50
- https://doi.org/10.1016/s0167-9317(99)00428-1
Abstract
No abstract availableKeywords
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