Thin film technology based on hydrogenated amorphous silicon
- 1 July 1991
- journal article
- Published by Elsevier in Materials Science and Engineering: A
- Vol. 139, 319-333
- https://doi.org/10.1016/0921-5093(91)90636-2
Abstract
No abstract availableKeywords
This publication has 51 references indexed in Scilit:
- Charge-induced structural relaxation in hydrogenated amorphous siliconPublished by Springer Nature ,2007
- The influence of the film-substrate interface on the defect density and other properties of sputter-deposited amorphous hydrogenated siliconIEEE Transactions on Electron Devices, 1989
- The influence of hydrogen surface reactions on the growth of evaporated a-Si: H FilmsPhysica Status Solidi (a), 1988
- Substitutional doping and photovoltaic application of RF magnetron sputtered a-Si:HSolar Energy Materials, 1986
- Preparation of low defect grade a-Si:H films by RF magnetron sputtering techniqueSolar Energy Materials, 1984
- Polymers in solutions : principles and applications of a direct renormalization methodJournal de Physique, 1981
- Post-hydrogenation of CVD deposited a-Si filmsJournal of Non-Crystalline Solids, 1980
- Hydrogenation and doping of vacuum-evaporated a-SiJournal of Non-Crystalline Solids, 1980
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy ConversionJournal of Applied Physics, 1956