A stress-induced diffusion model for failure of interconnects in microelectronic devices
- 1 June 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (11) , 7572-7580
- https://doi.org/10.1063/1.347525
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- X-ray diffraction determination of the effect of various passivations on stress in metal films and patterned linesJournal of Applied Physics, 1990
- Mechanical properties of thin filmsMetallurgical Transactions A, 1989
- Voiding due to thermal stress in narrow conductor linesScripta Metallurgica, 1989
- A model for stress-induced metal notching and voiding in very large-scale-integrated Al–Si (1%) metallizationJournal of Vacuum Science & Technology B, 1987
- Stress analysis of encapsulated fine-line aluminum interconnectApplied Physics Letters, 1987
- Stress-induced grain boundary fractures in Al–Si interconnectsJournal of Vacuum Science & Technology B, 1987
- Overview no. 41 The interactions of composition and stress in crystalline solidsActa Metallurgica, 1985
- A numerical study of cavity growth controlled by coupled surface and grain boundary diffusionMetallurgical Transactions A, 1982
- Overview no. 2: Non-equilibrium models for diffusive cavitation of grain interfacesActa Metallurgica, 1979
- The Thermodynamics of Stressed SolidsZeitschrift für Physikalische Chemie, 1966