Effect of implantation oxide on the Ti- and Co-silicidation of narrow diffusion and poly-lines
- 1 May 1998
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 320 (1) , 122-127
- https://doi.org/10.1016/s0040-6090(97)01070-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- TiSi2 Formation on Submicron Polysilicon Lines: Role of Line Width and Dopant ConcentrationMRS Proceedings, 1993
- Stability of As and B doped Si with respect to overlaying CoSi2 and TiSi2 thin filmsJournal of Materials Research, 1989
- Titanium disilicide formation on heavily doped silicon substratesJournal of Applied Physics, 1987
- First Phase Nucleation And Growth Of Titanium Disilicide With An iPhasis On The Influence Of OxygenMRS Proceedings, 1985
- Effects of ion implantation doping on the formation of TiSi2Journal of Vacuum Science & Technology A, 1984