Dependence of the activation energy of conductivity on the compensation degree in germanium
- 1 September 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 47 (1) , 325-328
- https://doi.org/10.1002/pssb.2220470141
Abstract
Some changes of the activation energy ϵ1 of the conductivity of Ge which are produced by variations of the compensation ratio K are studied in the region of temperatures where the conductivity is related to electrons released from shallow donors into the conduction band. A substantial increase of ϵ1 is found for shallow donor concentrations of about 1 × 1016 cm−3 and 1 – K → 0. This finding is in good quantitative agreement with the theory of Shklovskii and Efros.Keywords
This publication has 3 references indexed in Scilit:
- Quantitative study of the effect of compensation on impurity conduction in heavily doped n-type germaniumJournal of Non-Crystalline Solids, 1970
- Mobility of Electrons in Compensated Semiconductors. I. ExperimentPhysical Review B, 1967
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960