Titanium silicide formation on BF+2-implanted silicon
- 1 January 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (1) , 41-43
- https://doi.org/10.1063/1.95844
Abstract
Thin‐film interaction between titanium and BF+2 ‐implanted silicon substrates at 650–900 °C was investigated. At 650 °C, the incomplete Ti/Si reaction led to formation of a surface layer (∼600 Å thick) of titanium‐rich silicide (Si/Ti ∼1.6) on top of a near‐stoichiometric silicide layer. Annealing at 700 °C or higher resulted in conversion of the titanium film into predominantly TiSi2 and a lower sheet resistance. After annealing, boron was found to redistribute into the silicide layer and fluorine was segregated onto the silicide/silicon interface, but neither species apparently affected the overall sheet resistance for BF+2 dosages up to 6×1015 cm−2. A sheet resistance of ∼0.7 Ω/⧠ was obtained after annealing between 700 and 900 °C for 30 min.Keywords
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