CURRENT OSCILLATIONS IN Si p-i-n DEVICES AFTER IRRADIATION WITH ONE-MeV ELECTRONS
- 15 January 1969
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (2) , 63-65
- https://doi.org/10.1063/1.1652714
Abstract
Current oscillations similar to those previously reported in various semiconductors with impurity-induced traps have been observed in Si irradiated at 0°C with 1-MeV electrons. The oscillations are altered by annealing of the devices at temperatures below 0°C.Keywords
This publication has 5 references indexed in Scilit:
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- OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELSApplied Physics Letters, 1963