Transient Temperature Profiles in Silicon Films during Pulsed Laser Annealing
- 1 November 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (11R)
- https://doi.org/10.1143/jjap.30.2664
Abstract
Transient temperature profiles have been studied theoretically in silicon film heated by a single shot of a laser light pulse for several substrate structures. The molten silicon region is very shallow and disappears completely within a few tens of ns in (poly)crystalline silicon. It exists for more than a few hundred ns in amorphous silicon and also in silicon films on an oxide substrate. In silicon/oxide/conductive-substrate structures, the sustaining time of the molten silicon region is shortened by thinning the oxide film. Numerical results are compared with approximate relations derived from a simple physical picture.Keywords
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