Monte Carlo analysis of the transient spectral density of velocity fluctuations in semiconductors
- 3 February 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (5) , 613-615
- https://doi.org/10.1063/1.106570
Abstract
A multiparticular Monte Carlo method has been developed to calculate the spectral density of velocity fluctuations in transient conditions, when the electric field applied to a semiconductor changes. This method has been employed in the study of an instantaneous change in the electric field from 1 to 25 kV/cm in N-type GaAs. The results obtained are interpreted in terms of the phenomena occurring during the transient. The evolution of the transient spectral density for long times was found to converge at the steady state one of the final field.Keywords
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