Diffusion and the power spectral density and correlation function of velocity fluctuation for electrons in Si and GaAs by Monte Carlo methods

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Abstract
In Sec. II of this work, we briefly recall the various ways of defining the diffusion coefficient D and discuss their identity in high‐field conditions and in very high frequency operations. In Sec. III, theoretical values obtained by the Monte Carlo method for high static field operations in Si and GaAs are reported and discussed. In Sec. IV, the variations of diffusion values with the operational frequency or with the ’’observation’’ or sample time are studied and tentatively explained.