Polarized memory effect in the device including the organic charge-transfer complex, copper-tetracyanoquinodimethane
- 15 December 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (12) , 6535-6537
- https://doi.org/10.1063/1.346832
Abstract
The polarized memory effect, in which the switching between the on and off states depends on the polarity of the bias voltage, was found in the device including the film of the organic charge-transfer complex, copper-tetracyanoquinodimethane (Cu-TCNQ). The device consists of three layers, Al/Cu-TCNQ/Cu. The dc I-V characteristics and the dielectric behavior up to 106 Hz were studied. The number of the charge carriers which make the dielectric response below 103 Hz increases in the on state. The mechanism of the switching is briefly discussed.This publication has 11 references indexed in Scilit:
- Switching effect in organic charge transfer complex crystalsApplied Physics Letters, 1989
- Intrinsic negative-resistance effect in mixed-stack charge-transfer crystalsPhysical Review B, 1989
- Optical switching in semiconductor organic thin filmsApplied Physics Letters, 1982
- Raman study of the mechanism of electrical switching in Cu TCNQ filmsSolid State Communications, 1982
- A current-controlled electrically switched memory state in silver and copper-TCNQF4 radical-ion saltsSynthetic Metals, 1982
- Electrical switching and memory phenomena in Cu-TCNQ thin filmsApplied Physics Letters, 1979
- Polarized (letter ‘8’) memory in CdSe point contact diodesSolid State Communications, 1971
- New Phenomenon in Semiconductor Junctions—GaAs Duplex DiodesPhysical Review Letters, 1970
- SWITCHING AND MEMORY IN ZnSe–Ge HETEROJUNCTIONSApplied Physics Letters, 1970
- Substituted Quinodimethans. II. Anion-radical Derivatives and Complexes of 7,7,8,8-TetracyanoquinodimethanJournal of the American Chemical Society, 1962