New Phenomenon in Semiconductor Junctions—GaAs Duplex Diodes
- 7 September 1970
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 25 (10) , 653-656
- https://doi.org/10.1103/physrevlett.25.653
Abstract
By the introduction of a deep center, a "polarizable" GaAs junction has been obtained which exhibits duplex or multiplex stable dc current-voltage characteristics. Each conduction state, "polarized" by a characteristic threshold voltage, appears to last indefinitely with low applied voltages at room temperature. This effect can be explained by assuming that the deep center, consisting of oxygen possibly in combination with other impurities, possesses an inherent bistability.Keywords
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