Identification of Water Molecules in Low Humidity and Possibility of Quantitative Gas Analysis using Porous Silicon Gas Sensor
- 1 August 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (8R) , 4253
- https://doi.org/10.1143/jjap.35.4253
Abstract
In a previous experiment, it was shown that a gas identification sensor using porous silicon necessitated more than 60% concentration for identification. In the present study, it was shown by means of an experiment using water vapor that the concentration limit for gas identification may be controlled by changing the sensor temperature. In addition, the possibility of quantitative analysis of gas identification in which the sensor temperature is taken as a new parameter was proposed.Keywords
This publication has 6 references indexed in Scilit:
- Gas Identification by a Single Gas Sensor using Porous Silicon as the Sensitive MaterialJapanese Journal of Applied Physics, 1995
- Initial Oxidation Process of Anodized Porous Silicon with Hydrogen Atoms Chemisorbed on the Inner SurfaceJapanese Journal of Applied Physics, 1988
- Porosity and Pore Size Distributions of Porous Silicon LayersJournal of the Electrochemical Society, 1987
- An experimental and theoretical study of the formation and microstructure of porous siliconJournal of Crystal Growth, 1985
- Adsorption of water vapour on α-Fe2O3Discussions of the Faraday Society, 1971
- Adsorption of Gases in Multimolecular LayersJournal of the American Chemical Society, 1938