Law of the junction for degenerate material with position-dependent band gap and electron affinity
- 30 June 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (6) , 567-571
- https://doi.org/10.1016/0038-1101(79)90019-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Electrical current in solids with position-dependent band structureSolid-State Electronics, 1978
- Current in semiconductors with position-dependent band gap and electron affinityPhysica Status Solidi (a), 1977
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- The modified fletcher boundary conditionsSolid-State Electronics, 1975
- Boundary conditions for forward biased p-n junctionsSolid-State Electronics, 1973
- Boundary conditions at p-n junctionsSolid-State Electronics, 1971