Properties and applications of ion-implanted films
- 1 May 1978
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 50, 325-347
- https://doi.org/10.1016/0040-6090(78)90119-0
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- Silicon Planar Devices Using Nitrogen Ion ImplantationJapanese Journal of Applied Physics, 1976
- Formation of thin SiO2 films by high dose oxygen ion implantation into silicon and their investigation by IR techniquesThin Solid Films, 1976
- Lattice-site location of ion-implanted impurities in copper and other fcc metalsPhysical Review B, 1976
- Formation of SiC and Si3N4in silicon by ion implantationRadiation Effects, 1976
- Criteria for bombardment-induced structural changes in non-metallic solidsRadiation Effects, 1975
- Formation of Hg1-xCdxTe by Ion ImplantationJapanese Journal of Applied Physics, 1974
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973
- Ion implantation doping of compound semiconductorsPhysica Status Solidi (a), 1973
- Conduction in metal oxide thin films formed by oxygen ion implantationThin Solid Films, 1972
- Investigation of Tantalum Film Properties by LayersJournal of Vacuum Science and Technology, 1971