Dislocation structures and strain-relaxation in SiGe buffer layers on Si (0 0 1) substrates with an ultra-thin Ge interlayer
- 14 October 2003
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 224 (1-4) , 108-112
- https://doi.org/10.1016/j.apsusc.2003.08.082
Abstract
No abstract availableKeywords
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