Novel method of strain-relaxed Si1−Ge growth on Si(100) by MBE
- 1 July 1996
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 100-101, 487-490
- https://doi.org/10.1016/0169-4332(96)00324-8
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Fabrication of relaxed Si1−xGex layers on Si substrates by rapid thermal chemical vapor depositionJournal of Vacuum Science & Technology A, 1994
- Growth and Processing of Relaxed-Si1-xGex/Strained-Si Structures for Metal-Oxide Semiconductor ApplicationsJapanese Journal of Applied Physics, 1994
- Ge0.2Si0.8/Si Bragg-reflector mirrors for optoelectronic device applicationsApplied Physics Letters, 1993
- Electrical characterization of SiGe heterostructure bipolar transistorsThin Solid Films, 1992
- High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layerSemiconductor Science and Technology, 1992
- Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substratesApplied Physics Letters, 1991
- Growth and characterization of Si1−xGex and Ge epilayers on (100) SiJournal of Applied Physics, 1988
- Silicon MBE: From strained-layer epitaxy to device applicationJournal of Crystal Growth, 1984
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Epitaxial Growth of SOS Films with Amorphous Si Buffer LayerJapanese Journal of Applied Physics, 1981