Prospects of high voltage power ICs on thin SOI
- 1 January 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 229-232
- https://doi.org/10.1109/iedm.1992.307348
Abstract
Silicon on Insulator technology is promising for high voltage power IC applications. The required SOI layer thickness can be reduced if a large portion of the applied voltage is sustained by the bottom insulator layer. Combination of SOI and trenches or LOCOS has merits of simplified device isolation and high device packing density. Thin SOI layer will realize high-speed switching in high voltage devices because of the smaller amount of stored carriers. Substrate bias influences on device characteristics and potentials of SOI technology are discussed.Keywords
This publication has 2 references indexed in Scilit:
- Breakdown voltage enhancement for devices on thin silicon layer/silicon dioxide filmIEEE Transactions on Electron Devices, 1991
- Increased junction breakdown voltages in silicon-on-insulator diodesIEEE Transactions on Electron Devices, 1989